Si substrate controlled in-plane synthesis of self-assembled nanostructures catalyzed by Au nanoparticles

Zhou Zhang, Lai Mun Wong, Shijie Wang, Tao Wu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Self-assembled in-plane fabrication of Cu3Si and Mg 2SiO4 nanostructures were achieved on Si substrates by a simple vapor transport method. The morphologies of the as fabricated structures were controlled by the surface orientation of the substrates, i.e. Cu 3Si nanowires (NWs), nanosquares (NSs), and nanotriangles (NTs) were synthesized on Si (110), (100), and (111) substrates, respectively. In the case of Mg2SiO4, NWs with specific growth directions were observed. All the sides of the NTs & NSs and the growth directions of the NWs are along Si 〈110〉, indicating that the symmetries of nanostructure growth break into 2, 4, and 6 folds on Si (110), (100), and (111). Au nanoparticles (NPs) were used as the catalyst and played critical roles by absorbing metal vapor and breaking the barrier of native oxide layer on Si substrates. The positions of the as fabricated nanostructures were controlled by the Au NPs and the growth of Mg2SiO4 NWs can work as a mechanism for transporting Au NPs along specific directions.

Original languageEnglish (US)
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages120-121
Number of pages2
DOIs
StatePublished - May 5 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: Jan 3 2010Jan 8 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period01/3/1001/8/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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