Shallow trap states in pentacene thin films from molecular sliding

Joo H. Kang, Demetrio Da Silva Filho, Jean Luc Bredas, X. Y. Zhu

Research output: Contribution to journalArticlepeer-review

125 Scopus citations

Abstract

Petacene is one of the most promising organic semiconductors for thin-film transistors. Transport measurements in the past have established the presence of shallow traps but their origins have remained a mystery. Here we show that shallow traps in vapor-deposited crystalline pentacene thin films are due to local defects resulting from the sliding of pentacene molecules along their long molecular axis, while two-dimensional crystalline packing is maintained. Electronic structural calculation confirms that these sliding defects are shallow-charge traps with energies ≤100 meV above (below) the valence band maximum (conduction band minimum).

Original languageEnglish (US)
Article number152115
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number15
DOIs
StatePublished - 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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