Semiconductor quantum-dot based wideband emitter for optical sensors

Hery S. Djie*, Clara E. Dimas, Boon S. Ooi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

We report a novel broadband superluminescent diode using InGaAs/GaAs self-assembled quantum-dots heterostructure. The three sections superluminescent diode consists of index-guided ridge-waveguide section (4 μm wide) butt-connected to a broad-area photon absorber (50 μm wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces low ripple spectrum under continuous wave operation (20°C) with wavelength peak at ∼1210 nm. The spectral bandwidth can be tuned from 71 to 94 nm by electrically addressing the individual section of device.

Original languageEnglish (US)
Title of host publicationProceedings of the Fourth IEEE Conference on Sensors 2005
Pages932-934
Number of pages3
Volume2005
DOIs
StatePublished - 2005
Externally publishedYes
EventFourth IEEE Conference on Sensors 2005 - Irvine, CA, United States
Duration: Oct 31 2005Nov 3 2005

Other

OtherFourth IEEE Conference on Sensors 2005
CountryUnited States
CityIrvine, CA
Period10/31/0511/3/05

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

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