Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

James Semple, Gwenhivir Wyatt-Moon, Dimitra G Georgiadou, Martyn A. McLachlan, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.
Original languageEnglish (US)
Pages (from-to)1973-1980
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume64
Issue number5
DOIs
StatePublished - Jan 2 2017

Fingerprint Dive into the research topics of 'Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography'. Together they form a unique fingerprint.

Cite this