Self-assembled Si-Ge nanorings with size and composition-control

Jr-Hau He*, C. L. Hsin, C. W. Wang, L. J. Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Self-assembled single-crystal nanorings (NRs), as small as 10 nm. on Si and Si-Ge alloys have been fabricated by the mediation of Au nanodots. Si-Ge thin films were transformed into Si-Ge nanorings (silicon nanorings doped with controlled amount of Ge) with the assistance of Au catalysts deposited directly onto the thin film with a simple process. The mechanism of nanoring formation involves the mediation by Au nanodots and evaporation of Au-Si (Au-Si-Ge) eutectic liquid droplets at high temperatures. The process promises to be an effective nanofabrication technique to produce high density and uniform in size Si and Si-Ge nanorings.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
Pages236-239
Number of pages4
StatePublished - Dec 1 2006
EventExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 - Shanghai, China
Duration: May 15 2006May 16 2006

Publication series

NameExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Other

OtherExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
CountryChina
CityShanghai
Period05/15/0605/16/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

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