Self-assembled NiSi quantum-dot arrays on epitaxial Si0.7Ge 0.3 on (001)Si

W. W. Wu*, Jr-Hau He, S. L. Cheng, S. W. Lee, L. J. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The self-assembled NiSi quantum dot arrays were grown on relaxed epitaxial Si0.7Ge0.3 on (001)Si. The two dimensional pseudohexagonal structure was achieved under the influence of repulsive stress between nanodots. The undulated templates helped in achieving the growth of ordered silicide quantum dots with selected periodicity and size.

Original languageEnglish (US)
Pages (from-to)1836-1838
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number9
DOIs
StatePublished - Sep 1 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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