Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy

Z. Z. Sun, S. F. Yoon*, K. C. Yew, W. K. Loke, S. Z. Wang, Tien Khee Ng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

GaInNAs/GaAs quantum dots (QDs) were grown by solid-source molecular beam epitaxy equipped with a radio frequency nitrogen (N2) plasma source for the first time. High-density (∼1010cm-2) GaInNAs QDs with small sizes (∼30 nm) were achieved. Reflection high-energy electron diffraction observation revealed that the formation of GaInNAs QDs follows the Stranski-Krastanow growth mode. The evolution of GaInNAs QDs was investigated by atomic force microscopy, and the amount of GaInNAs coverage was found to have a significant effect on the dot density, average size and aspect ratio. Low temperature (5K) photoluminescence measurement on the GaInNAs QDs showed that the incorporation of N into InGaAs effectively reduced the emission energy, and there is an optimal amount of GaInNAs coverage, which will produce QDs with maximum luminescence intensity.

Original languageEnglish (US)
Pages (from-to)109-115
Number of pages7
JournalJournal of Crystal Growth
Volume242
Issue number1-2
DOIs
StatePublished - Jul 1 2002

Keywords

  • A1. Self-assembled quantum dots
  • A3. Solid-source molecular beam epitaxy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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