Self-Aligned and Scalable Growth of Monolayer WSe2 -MoS2 Lateral Heterojunctions

Ming-yang Li, Jiang Pu, Jing-Kai Huang, Yuhei Miyauchi, Kazunari Matsuda, Taishi Takenobu, Lain-Jong Li

Research output: Contribution to journalArticlepeer-review

35 Scopus citations


2D layered heterostructures have attracted intensive interests due to their unique optical, transport, and interfacial properties. The laterally stitched heterojunction based on dissimilar 2D transition metal dichalcogenides forms an intrinsic p–n junction without the necessity of applying an external voltage. However, no scalable processes are reported to construct the devices with such lateral heterostructures. Here, a scalable strategy, two-step and location-selective chemical vapor deposition, is reported to synthesize self-aligned WSe2–MoS2 monolayer lateral heterojunction arrays and demonstrates their light-emitting devices. The proposed fabrication process enables the growth of high-quality interfaces and the first successful observation of electroluminescence at the WSe2–MoS2 lateral heterojunction. The electroluminescence study has confirmed the type-I alignment at the interface rather than commonly believed type-II alignment. This self-aligned growth process paves the way for constructing various 2D lateral heterostructures in a scalable manner, practically important for integrated 2D circuit applications.
Original languageEnglish (US)
Pages (from-to)1706860
JournalAdvanced Functional Materials
Issue number17
StatePublished - Feb 28 2018


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