Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory

Ching Yuan Ho*, Jr-Hau He, Yuan Pul Chang, Chenhsin Lien

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Selective epitaxial growth (SEG) silicon as sacrificial layer is proposed to circumvent junction leakage (Ijun) of bit line contact due to silicon substrate loss by high aspect ratio contact etching and spontaneous salicide formation. The result indicates that the appropriate SEG silicon in contact area significantly reduces Ijun about three orders compared with no SEG silicon. In addition, the SEG method provides acceptable Kelvin contact resistance. Furthermore, during salicide formation, the consumed ratio of titanium to silicon is 0.7. It is confirmed that the feasible approach not only prevents from Ijun deterioration but also adjusts contact resistance as well.

Original languageEnglish (US)
Pages (from-to)6850-6852
Number of pages3
JournalThin Solid Films
Volume517
Issue number24
DOIs
StatePublished - Oct 30 2009

Keywords

  • High aspect ratio contact
  • Junction leakage
  • Kelvin contact resistance
  • Selective epitaxial growth
  • Spontaneous salicide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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