Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

Guangyu Liu*, Hongping Zhao, Jing Zhang, Joo Hyung Park, Luke J. Mawst, Nelson Tansu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices.

Original languageEnglish (US)
JournalNanoscale Research Letters
Volume6
Issue number1
DOIs
StatePublished - Jan 1 2011

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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