Selective area epitaxy of ultra-high density InGaN based quantum dots

Guangyu Liu*, Hongping Zhao, Jing Zhang, Joo Hyung Park, Luke J. Mawst, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Highly uniform InGaN quantum dots (QDs) were grown by metal-organic chemical vapor deposition utilizing self-assembled diblock copolymer nanopatterns. This approach resulted in ultra-high InGaN QD density of 8 × 1010 cm-2.

Original languageEnglish (US)
Title of host publication2011 IEEE Winter Topicals, WTM 2011
Pages35-36
Number of pages2
DOIs
StatePublished - Apr 11 2011
Event2011 Winter Topical Meetings, WTM 2011 - Keystone, CO, United States
Duration: Jan 10 2011Jan 12 2011

Publication series

Name2011 IEEE Winter Topicals, WTM 2011

Other

Other2011 Winter Topical Meetings, WTM 2011
CountryUnited States
CityKeystone, CO
Period01/10/1101/12/11

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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