Scaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correction

Yan Zhang, Wenbo Mi, Xiaocha Wang, Zaibing Guo

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Scaling of anomalous Hall effect in amorphous CoFeB films with thickness ranging from 2 to 160 nm have been investigated. We have found that the scaling relationship between longitudinal (ρxx) and anomalous Hall (ρAH) resistivity is distinctly different in the Bloch and localization regions. For ultrathin CoFeB films, the sheet resistance (Rxx) and anomalous Hall conductance (GAH) received quantum correction from electron localization showing two different scaling relationships at different temperature regions. In contrast, the thicker films show a metallic conductance, which have only one scaling relationship in the entire temperature range. Furthermore, in the dirty regime of localization regions, an unconventional scaling relationship View the MathML sourceσAH∝σxxα with α=1.99 is found, rather than α=1.60 predicted by the unified theory.
Original languageEnglish (US)
Pages (from-to)5-11
Number of pages7
JournalSolid State Communications
Volume215-216
DOIs
StatePublished - May 8 2015

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemistry(all)
  • Condensed Matter Physics

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