Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons

Aigu L. Lin, Haiyang Peng, Zhiqi Liu, Tao Wu, Chenliang Su, Kian Ping Loh, A. Ariando, Wei Chen, Andrew T.S. Wee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation.

Original languageEnglish (US)
Pages (from-to)1945-1952
Number of pages8
JournalSmall
Volume10
Issue number10
DOIs
StatePublished - May 28 2014

Keywords

  • MRAM
  • highly disordered system
  • magnetic graphene oxides
  • organic spintronics
  • variable range hopping

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)
  • Engineering (miscellaneous)

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