Room-Temperature Ferroelectricity in Hexagonally Layered α-In2\nSe3\n Nanoflakes down to the Monolayer Limit

Fei Xue, Weijin Hu, Ko-Chun Lee, Li-Syuan Lu, Junwei Zhang, Hao-Ling Tang, Ali Han, Wei-Ting Hsu, Shao Bo Tu, Wen-Hao Chang, Chen-Hsin Lien, Jr-Hau He, Zhidong Zhang, Lain-Jong Li, Xixiang Zhang

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Abstract

2D ferroelectric material has emerged as an attractive building block for high-density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking α-InSe nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal α-InSe nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric-field-induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (≈1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H α-InSe are developed, which are applicable for nonvolatile memories and heterostructure-based nanoelectronics/optoelectronics.
Original languageEnglish (US)
Pages (from-to)1803738
JournalAdvanced Functional Materials
Volume28
Issue number50
DOIs
StatePublished - Oct 21 2018

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