Role of oxygen vacancies in the high-temperature thermopower of indium oxide and indium tin oxide films

S. R. Sarath Kumar, S. Kasiviswanathan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Thermopower measurements in a range of 300-650 K along with room temperature optical absorption and electrical resistivity studies were performed on indium oxide (IO) and indium tin oxide (ITO) thin films grown by reactive dc sputtering. The thermopower of as-grown and oxygen-annealed IO and ITO films measured in Ar ambient displayed characteristics attributable to oxygen loss. The observations were substantiated with optical absorption and electrical resistivity results.

Original languageEnglish (US)
Article number025028
JournalSemiconductor Science and Technology
Volume24
Issue number2
DOIs
StatePublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

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