Role of interaction forces in controlling the stability and polishing performance of CMP slurries

G. Bahar Basim, Ivan Uriev Vakarelski, Brij M. Moudgil*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

Chemical mechanical polishing (CMP) is an essential step in metal and dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. These requirements are met through the control of chemical and mechanical interactions during the polishing process by engineering the slurry chemistry, particulate properties, and stability. In this study, the performance of surfactant-stabilized silica CMP slurries at high pH and high ionic strengths are investigated with particular emphasis on the particle-particle and particle-substrate interactions. It is shown that for the design of consistently high performing slurries, stability of abrasive particles must be achieved under the dynamic processing conditions of CMP while maintaining sufficient pad-particle-wafer interactions.

Original languageEnglish (US)
Pages (from-to)506-515
Number of pages10
JournalJournal of Colloid And Interface Science
Volume263
Issue number2
DOIs
StatePublished - Jul 15 2003

Keywords

  • Chemical mechanical polishing (CMP)
  • Interaction forces
  • Particle size
  • Particle size distribution
  • Slurry stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Colloid and Surface Chemistry

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