Role of biexciton state in excitonic resonant nonlinearity in homoepitaxial ZnSe

T. Saiki, M. Kuwata-Gonokami*, Kazuhiro Ohkawa, T. Mitsuyu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

With a high quality strain free ZnSe sample, the biexciton states are studied at 10K. The delay time dependences, spectral responses of the two-pulse four- wave mixing signal are examined in two polarization configurations. In orthogonal polarization configuration, biexciton two-photon resonance is clearly observed. The observed binding energy is 4 meV which is also confirmed by the nonlinear emission spectra associated with the biexciton destruction. The polarization dependences of the four-wave mixing signal are found to be a powerful tool to examine the biexciton contribution near the exciton resonance.

Original languageEnglish (US)
Pages (from-to)679-683
Number of pages5
JournalSolid State Communications
Volume95
Issue number10
DOIs
StatePublished - Jan 1 1995

Keywords

  • A. semiconductors
  • B. epitaxy
  • D. optical properties
  • E. luminescence
  • E. nonlinear optics

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Role of biexciton state in excitonic resonant nonlinearity in homoepitaxial ZnSe'. Together they form a unique fingerprint.

Cite this