Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages

J. B. Roldan, D. Maldonado, F. Jimenez-Molinos, C. Acal, J. E. Ruiz-Castro, A. M. Aguilera, F. Hui, J. Kong, Y. Shi, X. Jing, C. Wen, M. A. Villena, M. Lanza

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Memristor devices with the Au/Ag/h-BN/Fe structure have been fabricated and characterized. The switching voltages, and other newly-defined parameters extracted, like V2dmax1 and V2dmax2, have been analyzed statistically in an exhaustive manner. The conduction across the memristor can be described well with a Quantum Point Contact (QPC) model that accounts for quantized filamentary conduction. The distributions of set and reset voltages have been proved to be accurately reproduced by using Weibull distributions. We also present an analysis making use of phase-type distributions to characterize the measured data stochasticity.
Original languageEnglish (US)
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781728131993
DOIs
StatePublished - Apr 1 2020
Externally publishedYes

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