Revealing the surface electronic structures of AlGaN deep-ultraviolet multiple quantum wells with lateral polarity domains

Wei Guo, Li Chen, Houqiang Xu, Yingda Qian, Moheb Sheikhi, Jason Hoo, Shiping Gu, Liang Xu, Jianzhe Liu, Feras Alqatari, Xiaohang Li, Kaiyan He, Zhe Chuan Feng, Jichun Ye

Research output: Contribution to journalArticlepeer-review

Abstract

We report on the carrier dynamic and electronic structure investigations on AlGaN-based deep-ultraviolet multiple quantum wells (MQWs) with lateral polarity domains. The localized potential maximum is predicted near the domain boundaries by first-principle calculation, suggesting carrier localization and efficient radiative recombination. More importantly, lateral band diagrams of the MQWs are proposed based on electron affinities and valance band levels calculated from ultraviolet (UV) photoelectron spectroscopy. The proposed lateral band diagram is further demonstrated by surface potential distribution collected by Kelvin probe microscopy and the density-of-state calculation of energy bands. This work illustrates that lateral polarity structures are playing essential roles in the electronic properties of III-nitride photonic devices and may provide novel perspective in the realization of high-efficiency UV emitters.
Original languageEnglish (US)
Pages (from-to)812-818
Number of pages7
JournalPhotonics Research
Volume8
Issue number6
DOIs
StatePublished - Mar 20 2020

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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