Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

Haiding Sun, Feng Wu, Young Jae Park, T. M. Al tahtamouni, Che-Hao Liao, Wenzhe Guo, Nasir Alfaraj, Kuang-Hui Li, Dalaver H. Anjum, Theeradetch Detchprohm, Russell D. Dupuis, Xiaohang Li

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Abstract

We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.
Original languageEnglish (US)
Pages (from-to)011001
JournalApplied Physics Express
Volume11
Issue number1
DOIs
StatePublished - Dec 18 2017

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