Revealing buried interfaces to understand the origins of threshold voltage shifts in organic field-effect transistors

Simon G.J. Mathijssen, Mark Jan Spijkman, Anne Marije Andringa, Paul A. Van Hal, Iain McCulloch, Martijn Kemerink, René A.J. Janssen, Dago M. De Leeuw

Research output: Contribution to journalArticlepeer-review

86 Scopus citations

Abstract

The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field-effect transistor.

Original languageEnglish (US)
Pages (from-to)5105-5109
Number of pages5
JournalAdvanced Materials
Volume22
Issue number45
DOIs
StatePublished - Dec 1 2010

Keywords

  • charge trapping
  • exfoliation
  • organic field-effect transistors
  • scanning Kelvin probe microscopy
  • threshold voltage instabilities

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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