Resistive switching behaviors of ZnO nanorod layers

Wen Yuan Chang*, Chin An Lin, Jr Hau He, Tai Bor Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

109 Scopus citations

Abstract

We have fabricated vertically aligned ZnO nanorod layers (NRLs) on indium tin oxide (ITO) electrodes using a hydrothermal process. The Pt/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior. The resistive switching behavior may be related to the oxygen vacancies and/or zinc interstitials confined on the surface of the ZnO NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned ZnO NR. Superior stability in resistive switching characteristics was also observed, demonstrating that ZnO NRLs have the potential for next-generation nonvolatile memory applications.

Original languageEnglish (US)
Article number242109
JournalApplied Physics Letters
Volume96
Issue number24
DOIs
StatePublished - Jun 14 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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