Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Na Xiao, Marco A. Villena, Bin Yuan, Shaochuan Chen, Bingru Wang, Marek Eliáš, Yuanyuan Shi, Fei Hui, Xu Jing, Andrew Scheuermann, Kechao Tang, Paul C. McIntyre, Mario Lanza

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

In order to fulfill the information storage needs of modern societies, the performance of electronic nonvolatile memories (NVMs) should be continuously improved. In the past few years, resistive random access memories (RRAM) have raised as one of the most promising technologies for future information storage due to their excellent performance and easy fabrication. In this work, a novel strategy is presented to further extend the performance of RRAMs. By using only cheap and industry friendly materials (Ti, TiO2, SiOX, and n++Si), memory cells are developed that show both filamentary and distributed resistive switching simultaneously (i.e., in the same I–V curve). The devices exhibit unprecedented hysteretic I–V characteristics, high current on/off ratios up to ≈5 orders of magnitude, ultra low currents in high resistive state and low resistive state (100 pA and 125 nA at –0.1 V, respectively), sharp switching transitions, good cycle-to-cycle endurance (>1000 cycles), and low device-to-device variability. We are not aware of any other resistive switching memory exhibiting such characteristics, which may open the door for the development of advanced NVMs combining the advantages of filamentary and distributed resistive switching mechanisms.
Original languageEnglish (US)
JournalAdvanced Functional Materials
Volume27
Issue number33
DOIs
StatePublished - Sep 6 2017
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Electronic, Optical and Magnetic Materials

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