Reduced hot-carrier induced degradation of NMOS I/O transistors with sub-micron source-drain diffusion length for 0.11 μm dual gate oxide CMOS technology

Kwang Seng See*, Wai Shing Lau, Suey Li Toh, Hong Liao, Jae Gon Lee, Kun Li, Elgin Kiok Boone Quek, Kheng Chok Tee, Lap Hung Chan

*Corresponding author for this work

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