Reduced damage reactive ion etching process for fabrication of InGaAsP/InGaAs multiple quantum well ridge waveguide lasers

B. C. Qiu*, B. S. Ooi, A. C. Bryce, S. E. Hicks, C. D W Wilkinson, R. M. De La Rue, J. H. Marsh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The damage introduced into an InGaAs/InGaAsP quantum well structure during CH4/H2 reactive ion etching (RIE) processes was measured, for plasma powers from 20 to 100 W, using low temperature photoluminescence. The damage depth profile is estimated to be around 12-70 nm after annealing at 500°C for 60 s using a rapid thermal annealer. A reduced damage RIE process has been developed to fabricate InGaAs/InGaAsP multiquantum well ridge waveguide lasers. The performance of these lasers has been compared to that of lasers fabricated from the same epilayer using wet etching to form the ridge. The resultant threshold currents were essentially indistinguishable, being 44.5 and 43 mA, respectively, for dry and wet etched lasers with 500 μm long laser cavities.

Original languageEnglish (US)
Pages (from-to)1818-1822
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number4
StatePublished - Jul 1998
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Fingerprint Dive into the research topics of 'Reduced damage reactive ion etching process for fabrication of InGaAsP/InGaAs multiple quantum well ridge waveguide lasers'. Together they form a unique fingerprint.

Cite this