Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED

Tien Khee Ng, Chao Zhao, Chao Shen, Shafat Jahangir, Bilal Janjua, Ahmed Ben Slimane, Chun Hong Kang, Ahad A. Syed, Jingqi Li, Ahmed Y. Alyamani, Munir M. El-Desouki, Pallab Bhattacharya, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations


The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ∼830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.

Original languageEnglish (US)
Title of host publication2014 Conference on Lasers and Electro-Optics, CLEO 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
StatePublished - 2014
Event2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States
Duration: Jun 8 2014Jun 13 2014


Other2014 Conference on Lasers and Electro-Optics, CLEO 2014
CountryUnited States
CitySan Jose

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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