Record mobility in transparent p-type tin monoxide films and devices by phase engineering

Jesus Alfonso Caraveo-Frescas, Pradipta K. Nayak, Hala A. Al-Jawhari, Danilo Bianchi Granato, Udo Schwingenschlögl, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

218 Scopus citations

Abstract

Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide. © 2013 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)5160-5167
Number of pages8
JournalACS Nano
Volume7
Issue number6
DOIs
StatePublished - May 13 2013

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)
  • Engineering(all)

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