Realization of high aspect ratio nano-pillar type photonic crystal by deep reactive ion etching

H. G. Teo, M. B. Yu, J. Singh, N. Ranga, Jingqi Li, W. C. Yew, A. Q. Liu*

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    The realization of high aspect ratio nano-pillar type photonic crystal using deep reactive ion etching was studied. The key parameters of the DRIE process were studied to overcome the problems associated with the realization of nano-pillar type photonic bandgap (PBG). It was observed that etch parameters measured across wafers of different bias designs revealed the limits of finite etching species and differences. Sidewall scallops that determines the roughness on the nano-pillars were also investigated for different height and depths obtained through varying process parameters.

    Original languageEnglish (US)
    Pages (from-to)83-84
    Number of pages2
    JournalLEOS Summer Topical Meeting
    StatePublished - Sep 29 2004
    Event2004 Digest of the LEOS Summer Topical Meetings - San Diego, CA, United States
    Duration: Jul 28 2004Jul 30 2004

    Keywords

    • Deep reactive ion etching
    • Nano-pillar type photonic crystal
    • Scalloping
    • Sidewall profile control

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering

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