Rapid laser-induced photochemical conversion of sol-gel precursors to In2O3 layers and their application in thin-film transistors

Spilios Dellis, Ivan Isakov, Nikolaos Kalfagiannis, Kornelius Tetzner, Thomas Anthopoulos, Demosthenes C. Koutsogeorgis*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

We report the development of indium oxide (In2O3) transistors via a single step laser-induced photochemical conversion process of a sol-gel metal oxide precursor. Through careful optimization of the laser annealing conditions we demonstrated successful conversion of the precursor to In2O3 and its subsequent implementation in n-channel transistors with electron mobility up to 13 cm2 V−1 s−1. Importantly, the process does not require thermal annealing making it compatible with temperature sensitive materials such as plastic. On the other hand, the spatial conversion/densification of the sol-gel layer eliminates additional process steps associated with semiconductor patterning and hence significantly reduces fabrication complexity and cost. Our work demonstrates unambiguously that laser-induced photochemical conversion of sol-gel metal oxide precursors can be rapid and suitable for the manufacturing of large-area electronics.

Original languageEnglish (US)
Pages (from-to)3673-3677
Number of pages5
JournalJournal of Materials Chemistry C
Volume5
Issue number15
DOIs
StatePublished - Jan 1 2017

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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