When ZnSe is doped with nitrogen during growth by molecular beam epitaxy to produce p-type material the effective acceptor concentration is limited by the formation of a new type of compensating donor centre at a depth of about 50 meV beneath the conduction band. Raman spectroscopy has been used to show that the nature of the nitrogen acceptors themselves is unchanged at high doping levels and, by means of spin-flip scattering, to provide independent confirmation of the existence of the new donor, which has a g-value of 1.36 ± 0.07.
|Original language||English (US)|
|Number of pages||4|
|Journal||Materials Science Forum|
|State||Published - 1995|
ASJC Scopus subject areas
- Materials Science(all)