Raman scattering from acceptor and donor states in nitrogen-doped P-type zinc selenide

P. J. Boyce*, J. J. Davies, D. Wolverson, K. Ohkawa, T. Mitsuyu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

When ZnSe is doped with nitrogen during growth by molecular beam epitaxy to produce p-type material the effective acceptor concentration is limited by the formation of a new type of compensating donor centre at a depth of about 50 meV beneath the conduction band. Raman spectroscopy has been used to show that the nature of the nitrogen acceptors themselves is unchanged at high doping levels and, by means of spin-flip scattering, to provide independent confirmation of the existence of the new donor, which has a g-value of 1.36 ± 0.07.

Original languageEnglish (US)
Pages (from-to)251-254
Number of pages4
JournalMaterials Science Forum
Volume182-184
StatePublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Raman scattering from acceptor and donor states in nitrogen-doped P-type zinc selenide'. Together they form a unique fingerprint.

Cite this