Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

D. Lüerßen*, R. Bleher, H. Richter, Th Schimmel, H. Kalt, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, K. Ohkawa, B. Jobst, D. Hommel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures are found to induce enhanced radiative recombination visible as pairs of bright spots in microphotoluminescence intensity maps. Structural investigation by atomic-force microscopy and transmission electron microscopy (plan view as well as cross section) reveal that a widening and bending of quantum wells occurs when they are intersected by Frank-type stacking faults. The enlargement of the well width by up to 12 bilayers evokes an efficient localization of excitons. The localizing potential related to Shockley-type stacking-fault pairs is found to be much shallower.

Original languageEnglish (US)
Pages (from-to)3944-3946
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number25
StatePublished - Dec 20 1999
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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