Quasi Two-Dimensional Dye-Sensitized In 2 O 3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications

Alexander D. Mottram, Yen-Hung Lin, Pichaya Pattanasattayavong, Kui Zhao, Aram Amassian, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

© 2016 American Chemical Society. We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (92% in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.
Original languageEnglish (US)
Pages (from-to)4894-4902
Number of pages9
JournalACS Applied Materials & Interfaces
Volume8
Issue number7
DOIs
StatePublished - Feb 10 2016

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