Quasi-supercontinuum interband lasing characteristics of quantum dot nanostructures

C. L. Tan, Y. Wang, H. S. Djie, B. S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present the first analysis of wideband-stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (AE) is comparable to dot inhomogeneity.

Original languageEnglish (US)
Title of host publication2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
Pages103-104
Number of pages2
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 - Nottingham, United Kingdom
Duration: Sep 1 2008Sep 4 2008

Other

Other2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
CountryUnited Kingdom
CityNottingham
Period09/1/0809/4/08

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

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