Quantum well wires using As implantation induced intermixing in GaAs/AlGaAs

B. S. Ooi*, A. Saher Helmy, Y. S. Tang, A. C. Bryce, J. H. Marsh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The Fabrication of GaAs/AlGaAs quantum well wires using implantation of As at 45 keV to induce quantum well intermixing is reported. Photoluminescence spectra from the non-intermixed regions, lateral well, and the intermixed regions, barriers, were observed from samples with wires as narrow as 50 nm. The energies of the lateral wells were found to remain constant for wire widths between 1000 nm and 150 nm, and start to shift significantly towards high energy for 80 nm wires, showing 1-D confinement effects. The signal from the lateral well eventually merges with that from the lateral barrier for 35 nm wires, hence an intermixing radius of about 17 nm was estimated for the process.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
PublisherIEEE
Pages335
Number of pages1
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland
Duration: Sep 14 1998Sep 18 1998

Other

OtherProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
CityGlasgow, Scotland
Period09/14/9809/18/98

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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