Quantum-well intermixing using Ge-doped sol-gel derived silica encapsulant layer

H. S. Djie*, Boon Ooi, C. K.F. Ho, T. Mei, K. Pita, N. Q. Ngo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report the intermixing enhancement using the Ge-doped sol-gel derived silica encapsulant layer in InGaAs/InGaAsP quantum-well laser structure. A bandgap shift of ∼64 nm has been observed from 16% Ge-doped silica capped sample at an annealing temperature of 630°C while the intermixing at the similar temperature can be effectively suppressed with the e-beam evaporated SiO2 encapsulant layer. Using our theoretical model, nearly identical activation energy of 1.7±0.5 eV was obtained from the intermixed sample with Ge-doped silica. Similar intermixing enhancement holds for high Ge-content cap in the intermixed GaAs/AlGaAs quantum-wells related to Ga vacancy injection. We postulate that the dissimilarity in interdiffusion behavior between 0% and 16% Ge-doped silica capped sample is only attributed to the difference in the number of beneficial vacancies that involve in the intermixing process.

Original languageEnglish (US)
Title of host publicationProgress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Pages115-120
Number of pages6
StatePublished - Aug 23 2006
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 1 2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume891
ISSN (Print)0272-9172

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/1/05

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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