Quantum well intermixing in GaAs/AlGaAs laser structure using one-step rapid thermal oxidation of AlAs

Seng Lee Ng*, Oki Gunawan, Boon Siew Ooi, Yee Loy Lam, Yan Zhou, Yuen Chuen Chan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We report the development of a new quantum well intermixing technique in GaAs/AlGaAs laser structure. This technique uses a grown-in AlAs sacrificing layer as intermixing source and with the same layer, but oxidized using a one-step rapid thermal process (RTP), as the intermixing mask. Selective intermixing can therefore be achieved across the wafer using a one-step RTP cycle. Differential bandgap shift of as large as 47 meV has been observed from the masked and oxidized regions.

Original languageEnglish (US)
Pages (from-to)184-190
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3896
StatePublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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