Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation

Boon Ooi*, C. J. Hamilton, K. McIlvaney, A. C. Bryce, R. M. De La Rue, J. H. Marsh, J. S. Roberts

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote quantum-well intermixing (QWI) in double-quantum-well (DQW) GaAs-AlGaAs laser structures. The process requires neither ion implantation nor the deposition of dielectric caps. Differential bandgap shifts of up to 40 meV have been obtained between the control and the laser irradiated samples. Bandgap tuned lasers were fabricated from the intermixed samples and exhibited negligible changes in slope efficiency and only small increases (15%) in threshold current compared to as-grown devices.

Original languageEnglish (US)
Pages (from-to)587-589
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number5
DOIs
StatePublished - May 1 1997

Keywords

  • Gallium arsenide
  • Integrated optoelectronics
  • Laser materials-processing applications
  • Laser radiation effects
  • Quantum wells
  • Quantum-well intermixing
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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