Quantum well intermixing enhancement using Ge-doped sol-gel derived Si O2 encapsulant layer in InGaAsInP laser structure

H. S. Djie*, C. K.F. Ho, T. Mei, Boon Ooi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The intermixing enhancement in InGaAsInGaAsP quantum well laser structure has been investigated using the Ge-doped sol-gel derived Si O2 encapsulant layer. A band-gap shift of ~64 nm has been observed from 16% Ge-doped Si O2 capped sample at the annealing temperature of 630 °C with effective intermixing suppression using the e-beam-evaporated Si O2 layer. Ge incorporation in the sol-gel cap reduces the mismatch of thermal expansion coefficients efficiently retaining preferential vacancies, and therefore enhancing the interdiffusion rate. The intermixed material retains a good surface morphology and preserves the optical quality as evidenced by the absence of any appreciable photoluminescence linewidth broadening.

Original languageEnglish (US)
Article number081106
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number8
DOIs
StatePublished - Feb 21 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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