TY - JOUR
T1 - Quantum exponential relaxation of antiferromagnetic domain walls in FeTbO3 single crystal
AU - Zhang, X. X.
AU - Tejada, J.
AU - Roig, A.
AU - Nikolov, O.
AU - Molins, E.
PY - 1994/11/1
Y1 - 1994/11/1
N2 - We present the first experimental evidence of the exponential magnetic relaxation. This has been achieved in a single antiferromagnetic crystal of TbFeO3. The existence of two relaxations regimes, thermal and quantum, is demonstrated. The low temperature escape rate can be written as Γ = ω(H)exp[ -U(H) kBT*(T)] with T*(T) = T at T ≥ TC and T*(T) > T at T < TC, TC being the crossover temperature between the two regimes. From our data we have determined (with no adjustable parameters), the attempt frequency ω, the energy barrier U(H), and the WKB exponent, B. Our results are consistent with the occurrence of quantum tunneling of antiferromagnetic domain walls.
AB - We present the first experimental evidence of the exponential magnetic relaxation. This has been achieved in a single antiferromagnetic crystal of TbFeO3. The existence of two relaxations regimes, thermal and quantum, is demonstrated. The low temperature escape rate can be written as Γ = ω(H)exp[ -U(H) kBT*(T)] with T*(T) = T at T ≥ TC and T*(T) > T at T < TC, TC being the crossover temperature between the two regimes. From our data we have determined (with no adjustable parameters), the attempt frequency ω, the energy barrier U(H), and the WKB exponent, B. Our results are consistent with the occurrence of quantum tunneling of antiferromagnetic domain walls.
UR - http://www.scopus.com/inward/record.url?scp=0028542839&partnerID=8YFLogxK
U2 - 10.1016/0304-8853(94)90706-4
DO - 10.1016/0304-8853(94)90706-4
M3 - Article
AN - SCOPUS:0028542839
VL - 137
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - 3
ER -