Quantum exponential relaxation of antiferromagnetic domain walls in FeTbO3 single crystal

X. X. Zhang, J. Tejada*, A. Roig, O. Nikolov, E. Molins

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We present the first experimental evidence of the exponential magnetic relaxation. This has been achieved in a single antiferromagnetic crystal of TbFeO3. The existence of two relaxations regimes, thermal and quantum, is demonstrated. The low temperature escape rate can be written as Γ = ω(H)exp[ -U(H) kBT*(T)] with T*(T) = T at T ≥ TC and T*(T) > T at T < TC, TC being the crossover temperature between the two regimes. From our data we have determined (with no adjustable parameters), the attempt frequency ω, the energy barrier U(H), and the WKB exponent, B. Our results are consistent with the occurrence of quantum tunneling of antiferromagnetic domain walls.

Original languageEnglish (US)
JournalJournal of Magnetism and Magnetic Materials
Volume137
Issue number3
DOIs
StatePublished - Nov 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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