Quantum dot intermixing using excimer laser irradiation

H. S. Djie*, B. S. Ooi, O. Gunawan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The authors report a spatial control of the band gap in InGaAs/GaAs quantum dots (QDs) using the combined effects of pulsed excimer laser irradiation and impurity-free dielectric cap induced intermixing technique. A large band gap shift of up to 180 meV has been obtained under laser irradiation of 480 mJ/cm 2 and 150 pulses to the SiO 2 capped shallow QD structure, while the nonirradiated SiO 2 and Si xN y capped QDs only exhibit band gap shifts of 18 and 91 meV, respectively.

Original languageEnglish (US)
Article number081901
JournalApplied Physics Letters
Volume89
Issue number8
DOIs
StatePublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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