Quantum-dot intermixing enhancement using UV laser irradiation

Hery S. Djie*, Dong Ning Wang, Boon S. Ooi, James C M Hwang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report the development of an intermixing technique in InGaAs/GaAs quantum-dot (QD) structure using the combination effects of pulsed UV laser irradiation and dielectric induced layer intermixing. Using this method, the quantum-dot intermixing rate is greatly enhanced by group-III vacancies generated by the dielectric cap during annealing. A bandgap shift as large as 180 meV has been measured from a sample exposed to 480 mJ/cm2, 150 pulses of 248 nm UV light , and annealed with a 200 nm thick SiO2 encapsulant layer. Under similar annealing conditions, the non-irradiated SiO2 and SixNy encapsulated QDs only exhibit bandgap shifts of 18 meV and 91 meV, respectively.

Original languageEnglish (US)
Title of host publication2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
Pages266-269
Number of pages4
Volume2006
StatePublished - 2006
Externally publishedYes
Event2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings - Princeton, United States
Duration: May 7 2006May 11 2006

Other

Other2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
CountryUnited States
CityPrinceton
Period05/7/0605/11/06

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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