Quantum dashes on inp substrate for broadband emitter applications

Boon Ooi, Hery Susanto Djie, Yang Wang, Chee Loon Tan, James C.M. Hwang, Xiao Ming Fang, Joel M. Fastenau, Amy W.K. Liu, Gerard T. Dang, Wayne H. Chang

Research output: Contribution to journalArticlepeer-review

59 Scopus citations

Abstract

We report on the development of InAs/InGaAlAs quantum-dash-in-well structure on InP substrate for wideband emitter applications. A spectral width as broad as 58 meV observed from both photoluminescence and surface photovoltage spectroscopy on the sample indicating the formation of highly inhomogeneous InAs-dash structure that results from the quasi-continuous interband transition. The two-section superluminescent diodes (SLDs), with integrated photon absorber slab as lasing suppression section, fabricated on the InAs dash-in-well structure exhibits the close-to-Gaussian emission with a bandwidth (full-width at half-maximum) of up to 140 nm at ∼1.6 μm peak wavelength. The SLD produces a low spectrum ripple of 0.3 dB and an integrated power of ∼2 mW measured at 20°C under 8 kA/cm2. The oxide stripe laser exhibits wide lasing wavelength coverage of up to 76 nm at ∼1.64 μm center wavelength and an output optical power of ∼400 mW from simultaneous multiple confined states lasing at room temperature. This rule changing broadband lasing signature, different from the conventional interband diode laser, is achieved from the quasi-continuous interband transition formed by the inhomogeneous quantum-dash nanostructure.

Original languageEnglish (US)
Pages (from-to)1230-1238
Number of pages9
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume14
Issue number4
DOIs
StatePublished - Jul 1 2008

Keywords

  • Broadband semiconductor laser
  • Dash-in-well
  • InAs/InAlGaAs
  • InAs/InP
  • Quantum dash (Qdash)
  • Quantum dots (QDs)
  • Quantum well (QW)
  • Supercontinuum
  • Superluminescent diode (SLD)

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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