Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found. © 2010 IEEE.
|Original language||English (US)|
|Title of host publication||2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|State||Published - Jul 2010|