Pulsed metalorganic chemical vapor deposition of In-polar and N-polar InN semiconductors on GaN / sapphire for terahertz applications

Hongping Zhao*, M. Jamil, Guangyu Liu, G. S. Huang, Hua Tong, Guibao Xu, Yujie Ding, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Narrow bandgap (0.77eV) In- and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0THz) with output power of 2.36μW.

Original languageEnglish (US)
Title of host publication2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
StatePublished - Nov 16 2009
Event2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
Duration: Jun 2 2009Jun 4 2009

Publication series

Name2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Other

Other2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
CountryUnited States
CityBaltimore, MD
Period06/2/0906/4/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Pulsed metalorganic chemical vapor deposition of In-polar and N-polar InN semiconductors on GaN / sapphire for terahertz applications'. Together they form a unique fingerprint.

Cite this