Pulsed Metalorganic chemical vapor deposition of in-polar and N-Polar InN semiconductors on GaN/Sapphire for terahertz applications

Hongping Zhao*, M. Jamil, Guangyu Liu, G. S. Huang, Hua Tong, Guibao Xu, Yujie Ding, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Narrow bandgap (0.77eV) In-and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0THz) with output power of 2.36μW.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2009
StatePublished - Dec 1 2009
EventConference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States
Duration: May 31 2009Jun 5 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2009
CountryUnited States
CityBaltimore, MD
Period05/31/0906/5/09

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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