Pulsed-laser-induced quantum well intermixing in GaInAs/GaInAsP laser structures

T. K. Ong*, B. S. Ooi, Y. L. Lam, Y. C. Chan, Y. Zhou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A significant modification of the bandgap energy of GaInAs/GaInAsP laser structure was performed using pulsed-laser-induced disordering (PLID) technique. A Q-switched Nd:YAG laser with wavelength of 1.064 μm generated pulses of 8 ns and pulse repetition rate of 10 Hz was used. The effect of laser processing on the material structure was investigated using photoluminescence measurements and transmission electron microscopy.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
PublisherIEEE
Pages235
Number of pages1
StatePublished - 2000
Externally publishedYes
Event2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France
Duration: Sep 10 2000Sep 15 2000

Other

Other2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
CityNice, France
Period09/10/0009/15/00

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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