Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

R. J. Nicholas*, P. A. Shields, R. A. Child, Lain-Jong Li, E. Alphandéry, N. J. Mason, C. Bumby

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

13 Scopus citations

Abstract

The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.

Original languageEnglish (US)
Pages (from-to)204-210
Number of pages7
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume20
Issue number3-4
DOIs
StatePublished - Jan 1 2004
EventProceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States
Duration: Jun 16 2003Jun 20 2003

Keywords

  • GaSb
  • InAs
  • InSb
  • MOVPE
  • Quantum dots
  • Quantum well

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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