Processing and optical properties of Nd 3+ -doped SiO 2 -TiO 2 -Al 2 O 3 planar waveguides

Q. Xiang*, Y. Zhou, Boon Ooi, Y. L. Lam, Y. C. Chan, C. H. Karo

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We report here the processing and optical characterization of Nd 3+ -doped SiO 2 -TiO 2 -Al 2 O 3 planar waveguides deposited on SOS (Silica on silicon) substrates by the sol-gel route combined with spin-coating and rapid thermal annealing (RTA). The recipes used for preparing the solutions by sol-gel route are in mole ratio of 93SiO 2 : 7TiO 2 : 20AlO 1.5: ×ErO 1.5 (x = 0.5, 1, 1.5 and 2). In order to verify the residual OH content in the films, FTIR spectra were measured and the morphology of the material by the XRD analysis. Five 2-layer films annealed at a maximum temperature of 500 °C, 700 °C, 900 °C, 1000 °C, 1100 °C respectively were fabricated on silicon. The FTIR and XRD curves show that annealing at 1050 °C for 15s effectively removes the OH in the material and keeps the material amorphous. The propagation loss of the planar wavehuides was measured by using the method based on scattering measurement and the result was obtained to be 1.54 dB/cm. The fluorescence spectra were measured with 514 nm wavelength of Ar + laser by directly shining the pump beam on the film instead of prism coupling. The results show that the 1 mole Nd 3+ content recipe (93SiO 2 :7TiO 2 :20AlO 1.5 :1NdO 1.5 ) has the strongest emission efficiency among the four samples investigated.

Original languageEnglish (US)
Pages (from-to)19-24
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3943
StatePublished - Jan 1 2003
EventSol-Gel Optics V - San Jose, CA, USA
Duration: Jan 26 2000Jan 28 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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