Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure

Tribhuwan Pandey, Avinash P. Nayak, Jin Liu, Samuel T. Moran, Joon-Seok Kim, Lain-Jong Li, Jung-Fu Lin, Deji Akinwande, Abhishek K. Singh

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D /IG measurements.
Original languageEnglish (US)
Pages (from-to)4063-4069
Number of pages7
JournalSmall
Volume12
Issue number30
DOIs
StatePublished - Jun 20 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: T.P. and A.P.N. contributed equally to this work. Research at Indian Institute of Science was supported by National Program on Micro and Smart Systems (NpMASS) PARC No. 1:22 and DST Nanomission. Research at The University of Texas at Austin was supported in part by a Young Investigator Award (D.A.) from the Defense Threat Reduction Agency (DTRA). J.-F.L. acknowledges financial supports from Deep Carbon Observatory of the Sloan Foundation. The authors acknowledge computational facilities provided by Supercomputing Education and Research Centre, Indian Institute of Science, Bangalore.

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