Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

G. Z. Xing, J. B. Yi, F. Yan, Tao Wu, S. Li

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.
Original languageEnglish (US)
Pages (from-to)202411
JournalApplied Physics Letters
Volume104
Issue number20
DOIs
StatePublished - May 24 2014

Fingerprint Dive into the research topics of 'Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition'. Together they form a unique fingerprint.

Cite this